发明授权
- 专利标题: Deep quantum well electro-absorption modulator
- 专利标题(中): 深量子阱电吸收调制器
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申请号: US11148467申请日: 2005-06-08
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公开(公告)号: US07443561B2公开(公告)日: 2008-10-28
- 发明人: David P. Bour , Ashish Tandon , Michael R. T. Tan
- 申请人: David P. Bour , Ashish Tandon , Michael R. T. Tan
- 申请人地址: SG Singapore
- 专利权人: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- 当前专利权人: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 主分类号: G02F1/03
- IPC分类号: G02F1/03 ; H01L29/06 ; H01S5/00
摘要:
Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
公开/授权文献
- US20060279828A1 Deep quantum well electro-absorption modulator 公开/授权日:2006-12-14
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