发明授权
US07443899B2 Surface emitting semiconductor laser diode and manufacturing method thereof 失效
表面发射半导体激光二极管及其制造方法

  • 专利标题: Surface emitting semiconductor laser diode and manufacturing method thereof
  • 专利标题(中): 表面发射半导体激光二极管及其制造方法
  • 申请号: US10986038
    申请日: 2004-11-12
  • 公开(公告)号: US07443899B2
    公开(公告)日: 2008-10-28
  • 发明人: Nobuaki Ueki
  • 申请人: Nobuaki Ueki
  • 申请人地址: JP Tokyo
  • 专利权人: Fuji Xerox Co., Ltd.
  • 当前专利权人: Fuji Xerox Co., Ltd.
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Sughrue Mion, PLLC
  • 优先权: JP2004-158747 20040528
  • 主分类号: H01S5/00
  • IPC分类号: H01S5/00
Surface emitting semiconductor laser diode and manufacturing method thereof
摘要:
A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.
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