Invention Grant
- Patent Title: Fabrication process of memory cell
- Patent Title (中): 记忆体的制作过程
-
Application No.: US11963854Application Date: 2007-12-24
-
Publication No.: US07445972B2Publication Date: 2008-11-04
- Inventor: Hung-Tse Chen , Chi-Lin Chen , Yu-Cheng Chen
- Applicant: Hung-Tse Chen , Chi-Lin Chen , Yu-Cheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW94138538A 20051103
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.
Public/Granted literature
- US20080108195A1 FABRICATION PROCESS OF MEMORY CELL Public/Granted day:2008-05-08
Information query
IPC分类: