发明授权
- 专利标题: Semiconductor radiation detector and radiological imaging apparatus
- 专利标题(中): 半导体辐射探测器和放射成像设备
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申请号: US10874225申请日: 2004-06-24
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公开(公告)号: US07446319B2公开(公告)日: 2008-11-04
- 发明人: Norihito Yanagita , Hiroshi Kitaguchi , Takafumi Ishitsu , Kensuke Amemiya , Yuuichirou Ueno , Katsutoshi Tsuchiya , Shinichi Kojima , Kazuma Yokoi
- 申请人: Norihito Yanagita , Hiroshi Kitaguchi , Takafumi Ishitsu , Kensuke Amemiya , Yuuichirou Ueno , Katsutoshi Tsuchiya , Shinichi Kojima , Kazuma Yokoi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Dickstein Shapiro LLP
- 优先权: JP2003-341937 20030930
- 主分类号: G01T1/164
- IPC分类号: G01T1/164
摘要:
A radiation imaging apparatus with high spatial resolution including semiconductor radiation detectors arranged on a wiring board capable of detecting γ-rays by separating their positions in the direction of incidence of γ-rays is provided. A semiconductor radiation detector is constructed by including five semiconductor devices made up of, for example, CdTe rectangular parallelepiped plates, a cathode electrode on one side of the semiconductor device, an anode electrode on the other side of the semiconductor device and an insulator for coating five semiconductor detection devices from the outside. The semiconductor radiation detector is mounted on a wiring board using an anode pin and a cathode pin.
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