发明授权
US07446378B2 ESD protection structure for I/O pad subject to both positive and negative voltages
有权
I / O焊盘的ESD保护结构受到正和负电压的影响
- 专利标题： ESD protection structure for I/O pad subject to both positive and negative voltages
- 专利标题（中）： I / O焊盘的ESD保护结构受到正和负电压的影响
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申请号： US11027788申请日： 2004-12-29
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公开(公告)号： US07446378B2公开(公告)日： 2008-11-04
- 发明人: Gregory Bakker
- 申请人： Gregory Bakker
- 申请人地址： US CA Mountain View
- 专利权人： Actel Corporation
- 当前专利权人： Actel Corporation
- 当前专利权人地址： US CA Mountain View
- 代理机构： Lewis and Roca LLP
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor to ground if the voltage at the I/O pad is positive and a second switch connects the p-well containing the n-channel MOS transistor to the I/O pad if the voltage at the I/O pad is negative. A third switch connects the gate of the n-channel MOS transistor to the p-well if it is turned off and a fourth switch connects the gate of the n-channel MOS transistor to VCC if it is turned on.
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