发明授权
- 专利标题: Device having dual etch stop liner and protective layer
- 专利标题(中): 具有双蚀刻停止衬垫和保护层的器件
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申请号: US11845888申请日: 2007-08-28
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公开(公告)号: US07446395B2公开(公告)日: 2008-11-04
- 发明人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Dan Schnurmann
- 主分类号: H01L23/58
- IPC分类号: H01L23/58
摘要:
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a semiconductor device comprising a protective layer adjacent a first device, a first silicon nitride liner over the protective layer, a second silicon nitride liner adjacent a second device, and a first silicide layer adjacent the first device and a second silicide layer adjacent the second device, wherein a thickness is substantially the same in the first and second silicide layers.
公开/授权文献
- US20070292696A1 DEVICE HAVING DUAL ETCH STOP LINER AND PROTECTIVE LAYER 公开/授权日:2007-12-20