Invention Grant
US07446474B2 Hetero-junction electron emitter with Group III nitride and activated alkali halide
失效
具有III族氮化物和活性碱卤化物的异质结电子发射体
- Patent Title: Hetero-junction electron emitter with Group III nitride and activated alkali halide
- Patent Title (中): 具有III族氮化物和活性碱卤化物的异质结电子发射体
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Application No.: US11090094Application Date: 2005-03-25
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Publication No.: US07446474B2Publication Date: 2008-11-04
- Inventor: Juan Ramon Maldonado , Francisco J. Machuca , Steven T. Coyle
- Applicant: Juan Ramon Maldonado , Francisco J. Machuca , Steven T. Coyle
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Janah & Associates, P.C.
- Main IPC: H01J40/06
- IPC: H01J40/06
Abstract:
A photocathode is capable of generating an electron beam from incident light. The photocathode comprises a light permeable support having a light receiving surface and an opposing surface. A Group III nitride layer is provided on the opposing surface of the support. The Group III nitride layer comprises at least one Group III element and nitrogen. An alkali halide layer is provided on the Group III nitride layer. The alkali halide can be a cesium halide, such as cesium bromide or iodide.
Public/Granted literature
- US20060055321A1 Hetero-junction electron emitter with group III nitride and activated alkali halide Public/Granted day:2006-03-16
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