发明授权
- 专利标题: Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling
- 专利标题(中): 具有堆叠偏置层的磁隧道结,提供正交交换耦合
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申请号: US10931677申请日: 2004-08-31
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公开(公告)号: US07446986B2公开(公告)日: 2008-11-04
- 发明人: Satoru Araki , Jeffrey Robinson Childress , Stefan Maat , Daniele Mauri , Matthew Joseph Carey
- 申请人: Satoru Araki , Jeffrey Robinson Childress , Stefan Maat , Daniele Mauri , Matthew Joseph Carey
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.