发明授权
US07447092B2 Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature
有权
写入驱动电路，用于根据环境温度控制施加到相变存储器的写入电流
- 专利标题： Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature
- 专利标题（中）： 写入驱动电路，用于根据环境温度控制施加到相变存储器的写入电流
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申请号： US11079198申请日： 2005-03-15
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公开(公告)号： US07447092B2公开(公告)日： 2008-11-04
- 发明人: Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
- 申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce P.L.C.
- 优先权： KR2003-58247 20030822
- 主分类号： G11C7/04
- IPC分类号： G11C7/04
摘要：
A programming method which controls the amount of a write current applied TO Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the phase change material (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing or keeping the same a reset current and/or a set current.