Invention Grant
- Patent Title: Process for improving the emission of electron field emitters
- Patent Title (中): 改善电子场发射体发射的方法
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Application No.: US09882719Application Date: 2001-06-15
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Publication No.: US07449081B2Publication Date: 2008-11-11
- Inventor: Robert Joseph Bouchard , Lap-Tak Andrew Cheng , John Gerard Lavin , David Herbert Roach
- Applicant: Robert Joseph Bouchard , Lap-Tak Andrew Cheng , John Gerard Lavin , David Herbert Roach
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: B32B38/10
- IPC: B32B38/10 ; H01J1/62
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Public/Granted literature
- US20020074932A1 Process for improving the emission of electron field emitters Public/Granted day:2002-06-20
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