发明授权
US07449348B1 Feedback control of imprint mask feature profile using scatterometry and spacer etchback
有权
使用散射法和间隔蚀刻蚀刻对印迹掩模特征轮廓的反馈控制
- 专利标题： Feedback control of imprint mask feature profile using scatterometry and spacer etchback
- 专利标题（中）： 使用散射法和间隔蚀刻蚀刻对印迹掩模特征轮廓的反馈控制
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申请号： US10858605申请日： 2004-06-02
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公开(公告)号： US07449348B1公开(公告)日： 2008-11-11
- 发明人: Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
- 申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Amin, Turocy & Calvin, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for retrograde feature profiles on an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature profile via employing a scatterometry system to detect retrograde feature profiles, and mitigating the retrograde profiles via a spacer etchback procedure.
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