Invention Grant
- Patent Title: Wafer level packaging cap and fabrication method thereof
- Patent Title (中): 晶圆级封装盖及其制造方法
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Application No.: US11365838Application Date: 2006-03-02
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Publication No.: US07449366B2Publication Date: 2008-11-11
- Inventor: Moon-chul Lee , Jong-oh Kwon , Woon-bae Kim , Ji-hyuk Lim , Suk-jin Ham , Jun-sik Hwang , Chang-youl Moon
- Applicant: Moon-chul Lee , Jong-oh Kwon , Woon-bae Kim , Ji-hyuk Lim , Suk-jin Ham , Jun-sik Hwang , Chang-youl Moon
- Applicant Address: KR Suwon
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0098433 20051019
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.
Public/Granted literature
- US20070085195A1 Wafer level packaging cap and fabrication method thereof Public/Granted day:2007-04-19
Information query
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