发明授权
US07449745B2 Nonvolatile semiconductor memory device having element isolating region of trench type
有权
具有沟槽型元件隔离区域的非易失性半导体存储器件
- 专利标题: Nonvolatile semiconductor memory device having element isolating region of trench type
- 专利标题(中): 具有沟槽型元件隔离区域的非易失性半导体存储器件
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申请号: US11687019申请日: 2007-03-16
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公开(公告)号: US07449745B2公开(公告)日: 2008-11-11
- 发明人: Michiharu Matsui , Seiichi Mori , Riichiro Shirota , Yuji Takeuchi , Takeshi Kamigaichi
- 申请人: Michiharu Matsui , Seiichi Mori , Riichiro Shirota , Yuji Takeuchi , Takeshi Kamigaichi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2000-291910 20000926; JP2001-272224 20010907
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating layer, an element isolating region comprising an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer, the element isolating region isolating a element region and being self-aligned with the first electrode layer, a second insulating film formed on the first electrode layer and the element isolating region, an open portion exposing a surface of the first electrode layer being formed in the second insulating film, and a second electrode layer formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electronically connected to the first electrode layer via the open portion.