Invention Grant
US07449935B2 Driven circuit of an emitter switching configuration to control the saturation level of a power transistor when used with highly variable collector currents 有权
发射极开关配置的驱动电路,用于控制功率晶体管在高可变集电极电流下的饱和电平

Driven circuit of an emitter switching configuration to control the saturation level of a power transistor when used with highly variable collector currents
Abstract:
A drive circuit for an emitter switching configuration of transistors having a cascode connection of a power bipolar transistor and of a power MOS transistor control the saturation level of the configuration in applications which provide highly variable collector currents. The drive circuit includes a circuit operable to apply a varying voltage value to the control terminal of the bipolar transistor. A current/voltage converter senses a collector current flowing in the power bipolar transistor and controls conduction of a first transistor responsive thereto, the conduction of the first transistor controlling the conduction of a second transistor so as to vary the control terminal voltage in proportion to the sensed collector current of the power bipolar transistor.
Information query
Patent Agency Ranking
0/0