Invention Grant
- Patent Title: Driven circuit of an emitter switching configuration to control the saturation level of a power transistor when used with highly variable collector currents
- Patent Title (中): 发射极开关配置的驱动电路,用于控制功率晶体管在高可变集电极电流下的饱和电平
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Application No.: US11066610Application Date: 2005-02-25
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Publication No.: US07449935B2Publication Date: 2008-11-11
- Inventor: Rosario Scollo , Simone Buonomo , Giovanni Vitale
- Applicant: Rosario Scollo , Simone Buonomo , Giovanni Vitale
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H03K17/042
- IPC: H03K17/042

Abstract:
A drive circuit for an emitter switching configuration of transistors having a cascode connection of a power bipolar transistor and of a power MOS transistor control the saturation level of the configuration in applications which provide highly variable collector currents. The drive circuit includes a circuit operable to apply a varying voltage value to the control terminal of the bipolar transistor. A current/voltage converter senses a collector current flowing in the power bipolar transistor and controls conduction of a first transistor responsive thereto, the conduction of the first transistor controlling the conduction of a second transistor so as to vary the control terminal voltage in proportion to the sensed collector current of the power bipolar transistor.
Public/Granted literature
Information query
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