A method and apparatus are provided for implementing enhanced vertical ECC storage in a dynamic random access memory. A dynamic random access memory (DRAM) is split into a plurality of groups. Each group resides inside a DRAM row address strobe (RAS) page so that multiple locations inside a group can be accessed without incurring an additional RAS access penalty. Each group is logically split into a plurality of segments for storing data with at least one segment for storing ECC for the data segments. For a write operation, data are written in a data segment and then ECC for the data are written in an ECC segment. For a read operation, ECC are read from an ECC segment, then data are read from the data segment.