发明授权
- 专利标题： Semiconductor device embedded with pressure sensor and manufacturing method thereof
- 专利标题（中）： 嵌入压力传感器的半导体器件及其制造方法
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申请号： US11878243申请日： 2007-07-23
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公开(公告)号： US07451656B2公开(公告)日： 2008-11-18
- 发明人: Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
- 申请人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权： JP2004-289476 20041001; JP2005-284013 20050929
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; G01L9/16
摘要：
The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.