Invention Grant
US07452783B2 Capacitor for a semiconductor device and method of forming the same
失效
用于半导体器件的电容器及其形成方法
- Patent Title: Capacitor for a semiconductor device and method of forming the same
- Patent Title (中): 用于半导体器件的电容器及其形成方法
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Application No.: US11286316Application Date: 2005-11-23
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Publication No.: US07452783B2Publication Date: 2008-11-18
- Inventor: Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
- Applicant: Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2004-0097363 20041125
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
Public/Granted literature
- US20060113580A1 Capacitor for a semiconductor device and method of forming the same Public/Granted day:2006-06-01
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