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US07452825B2 Method of forming a mask structure and method of forming a minute pattern using the same 有权
形成掩模结构的方法和使用其形成微小图案的方法

Method of forming a mask structure and method of forming a minute pattern using the same
摘要：
In the method of forming a mask structure, a first mask is formed on a substrate where the first mask includes a first mask pattern having a plurality of mask pattern portions having openings therebetween and a second mask pattern having a corner portion of which an inner side wall that is curved. A sacrificial layer is formed on the first mask. A hard mask layer is formed on the sacrificial layer. After the hard mask layer is partially removed until the sacrificial layer adjacent to the corner portion is exposed, a second mask is formed from the hard mask layer remaining in the space after removing the sacrificial layer. A minute pattern having a fine structure may be easily formed on the substrate.
摘要（中）：

在形成掩模结构的方法中，第一掩模形成在基板上，其中第一掩模包括具有多个具有开口的掩模图案部分的第一掩模图案和第二掩模图案，第二掩模图案具有内侧 弯曲的墙壁 牺牲层形成在第一掩模上。 在牺牲层上形成硬掩模层。 在硬掩模层被部分地去除直到与拐角部分相邻的牺牲层被暴露之后，在去除牺牲层之后从残留在空间中的硬掩模层形成第二掩模。 可以容易地在基板上形成具有精细结构的微小图案。

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