The present invention relates to a method for programming a memory cell having a determined transconductance curve. The programming of the memory cell comprises a series of programming cycles each comprising a step of verifying the state of the memory cell. According to the present invention, the verify step comprises a first read of the memory cell with a first read voltage greater than a reference threshold voltage, and a second read of the memory cell with a second read voltage lower than or equal to the reference threshold voltage. The memory cell is considered not to be in the programmed state if first- and second-read currents flowing through the memory cell are above determined thresholds, and programming voltage pulses are applied to the memory cell while the latter is not in the programmed state. Application in particular to the programming of Flash memory cells.