发明授权
- 专利标题: Method for producing a silicon wafer
- 专利标题(中): 硅晶片的制造方法
-
申请号: US10957026申请日: 2004-10-01
-
公开(公告)号: US07456106B2公开(公告)日: 2008-11-25
- 发明人: Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki
- 申请人: Sakae Koyata , Kazushige Takaishi , Tohru Taniguchi , Kazuo Fujimaki
- 申请人地址: JP Tokyo
- 专利权人: Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人: Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Duane Morris LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; B44C1/22
摘要:
Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a front-surface mirror-polishing step for mirror-polishing the front surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.
公开/授权文献
- US20050148181A1 Method for producing a silicon wafer 公开/授权日:2005-07-07