发明授权
- 专利标题: Write/delete process for resistive switching memory components
- 专利标题(中): 电阻式开关存储器组件的写/删除过程
-
申请号: US11092969申请日: 2005-03-30
-
公开(公告)号: US07457145B2公开(公告)日: 2008-11-25
- 发明人: Michael Kund , Thomas Happ
- 申请人: Michael Kund , Thomas Happ
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 优先权: DE102004015928 20040331
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
The invention relates to a system, a memory component and a process for operating a memory cell, which includes an active material, which can be changed into a more or less conductive state by an appropriate switching process, whereby the process including (a) bringing the memory cell into the more or less conductive state and evaluating the state of the memory cell after it has been changed into the more or less conductive state.
公开/授权文献
信息查询