发明授权
US07457338B2 Quantum well lasers with strained quantum wells and dilute nitride barriers
有权
量子阱激光器与应变量子阱和稀氮化物屏障
- 专利标题： Quantum well lasers with strained quantum wells and dilute nitride barriers
- 专利标题（中）： 量子阱激光器与应变量子阱和稀氮化物屏障
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申请号： US11406834申请日： 2006-04-19
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公开(公告)号： US07457338B2公开(公告)日： 2008-11-25
- 发明人: Luke J. Mawst , Nelson Tansu , Jeng-Ya Yeh
- 申请人： Luke J. Mawst , Nelson Tansu , Jeng-Ya Yeh
- 申请人地址： US WI Madison
- 专利权人： Wisconsin Alumni Research Foundation
- 当前专利权人： Wisconsin Alumni Research Foundation
- 当前专利权人地址： US WI Madison
- 代理机构： Foley & Lardner LLP
- 主分类号： H01S3/04
- IPC分类号： H01S3/04
摘要：
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor.
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