发明授权
- 专利标题: Hafnium alloy target and process for producing the same
- 专利标题(中): 铪合金靶材及其制造方法
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申请号: US10548347申请日: 2004-01-21
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公开(公告)号: US07459036B2公开(公告)日: 2008-12-02
- 发明人: Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
- 申请人: Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
- 申请人地址: JP Tokyo
- 专利权人: Nippon Mining & Metals Co., Ltd
- 当前专利权人: Nippon Mining & Metals Co., Ltd
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2003-061084 20030307
- 国际申请: PCT/JP2004/000448 WO 20040121
- 国际公布: WO2004/079039 WO 20040916
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
公开/授权文献
- US20060189164A1 Hafnium alloy target and process for producing the same 公开/授权日:2006-08-24