Invention Grant
US07459393B2 Method for fabricating semiconductor components with thinned substrate, circuit side contacts, conductive vias and backside contacts 有权
用薄化衬底制造半导体元件的方法,电路侧触点,导电通孔和背面触点

Method for fabricating semiconductor components with thinned substrate, circuit side contacts, conductive vias and backside contacts
Abstract:
A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.
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