The present invention realizes the two-layered resist structure for obtaining a half exposure pattern of high sensitivity and high accuracy and a manufacturing method of a display device which includes thin film transistors which are formed using the two-layered resist. The resist is constituted of five layers, that is, a base film, a cushion layer, an upper-layer resist, a lower-layer resist and a cover film. Thicknesses of these structural members are set such that base film has a thickness of 50 to 100 μm, the cushion layer has a thickness of 10 to 30 μm, the upper-layer resist has a thickness of 0.5 to 1.0 μm, the lower-layer resist has a thickness of 0.5 to 1.0 μm, and the cover film has a thickness of 10 to 30 μm.