Invention Grant
- Patent Title: Indium oxide based material and method for preparing the same
- Patent Title (中): 氧化铟基材料及其制备方法
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Application No.: US11336142Application Date: 2006-01-20
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Publication No.: US07462302B2Publication Date: 2008-12-09
- Inventor: Chung-Cheng Chang , Shin-Bin Huang
- Applicant: Chung-Cheng Chang , Shin-Bin Huang
- Applicant Address: TW
- Assignee: Chung-Cheng Chang
- Current Assignee: Chung-Cheng Chang
- Current Assignee Address: TW
- Agency: Ostrolenk, Faber, Gerb & Soffen, LLP
- Main IPC: H01B1/08
- IPC: H01B1/08

Abstract:
An indium oxide based material containing carbon, and a method for preparing the same are provided. In such a method, the carbon is added to the indium oxide based material film so that the electrical resistivity of the indium oxide based material film is decreased, and the light transmittance of the indium oxide based material in the shorter wavelength range is increased, and also the light can transmit through such a material over a broader short wavelength range. The indium oxide based material prepared by the method of the present invention has higher electrical conductivity and higher light transmittance in comparison with the conventional one without adding carbon.
Public/Granted literature
- US20070170400A1 Indium oxide based material and method for preparing the same Public/Granted day:2007-07-26
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