Invention Grant
US07462436B2 Positive photoresist composition and method of forming resist pattern
有权
正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
- Patent Title: Positive photoresist composition and method of forming resist pattern
- Patent Title (中): 正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
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Application No.: US10564510Application Date: 2004-07-13
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Publication No.: US07462436B2Publication Date: 2008-12-09
- Inventor: Yasuo Masuda , Toshiki Okui
- Applicant: Yasuo Masuda , Toshiki Okui
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: JP2003-197873 20030716; JP2003-197874 20030716
- International Application: PCT/JP2004/010270 WO 20040713
- International Announcement: WO2005/007719 WO 20050127
- Main IPC: G03F7/023
- IPC: G03F7/023 ; G03F7/30
Abstract:
There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.
Public/Granted literature
- US20060210914A1 Positive photoresist composition and method of forming resist pattern Public/Granted day:2006-09-21
Information query
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