发明授权
US07466010B2 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
有权
具有自对准硅化物和自对准发射极接触边界的双极晶体管
- 专利标题： Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
- 专利标题（中）： 具有自对准硅化物和自对准发射极接触边界的双极晶体管
-
申请号： US11175094申请日： 2005-07-05
-
公开(公告)号： US07466010B2公开(公告)日： 2008-12-16
- 发明人: David C. Ahlgren , Gregory G. Freeman , Marwan H. Khater , Richard P. Volant
- 申请人： David C. Ahlgren , Gregory G. Freeman , Marwan H. Khater , Richard P. Volant
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Todd M. C. Li, Esq.
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11
摘要：
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.
公开/授权文献
信息查询
IPC分类:
