发明授权
- 专利标题: Flash memory data storage apparatus
- 专利标题(中): 闪存数据存储装置
-
申请号: US11224662申请日: 2005-09-12
-
公开(公告)号: US07467251B2公开(公告)日: 2008-12-16
- 发明人: Min-Gun Park , Jin-Wook Lee
- 申请人: Min-Gun Park , Jin-Wook Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello, LLP
- 优先权: KR10-2004-0107676 20041217
- 主分类号: G06F13/40
- IPC分类号: G06F13/40 ; G06F13/38 ; G06F13/14
摘要:
A flash memory data storage apparatus comprises a flash memory and a flash interface. The flash memory transceives data through a flash bus group. The flash interface includes first through n'th flash input buffers that transfer data to a host bus group in stages in response to first through n'th transfer clock control signals. An i'th flash input buffer provides data through i'th input-buffer bus groups in number of at least Ni. A bus width of each of the i'th input-buffer bus groups is wider than a bus width of each of an (i−l)'th input-buffer bus groups. A period of an i'th transfer clock control signal is longer than a period of an (i−1)'th transfer clock control signal. The Ni is obtained by dividing a bus width of the flash bus group by dividing the bus width of the flash bus group by the bus width of the each of the i'th input-buffer bus groups.
公开/授权文献
- US20060136649A1 Flash memory data storage apparatus 公开/授权日:2006-06-22
信息查询