Invention Grant
- Patent Title: Internal voltage generators for semiconductor memory device
- Patent Title (中): 用于半导体存储器件的内部电压发生器
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Application No.: US11623396Application Date: 2007-01-16
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Publication No.: US07468628B2Publication Date: 2008-12-23
- Inventor: Jae Hyuk Im , Jae Jin Lee
- Applicant: Jae Hyuk Im , Jae Jin Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR2004-90256 20041108
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H03B5/24

Abstract:
An internal voltage generator capable of reducing the variation width in the level of an internal voltage VPP, by performing charge pumping only a predetermined number of times in a period where an oscillator driving signal is at a logic HIGH level, and then stopping the charge pumping operation. The oscillator controller generates an oscillation control signal for stopping an oscillation operation of a ring oscillator by using an output signal of a level detector and an output signal of the ring oscillator. The ring oscillator does not generate an oscillation signal at a predetermined time point where an output signal of the level detector is at a HIGH level in response to the oscillation control signal. The charge pump circuit generates an internal voltage by performing a charge pumping operation only predetermined times in response to the oscillation signal, and then stopping the charge pumping operation.
Public/Granted literature
- US20070109059A1 Internal Voltage Generators for Semiconductor Memory Device Public/Granted day:2007-05-17
Information query
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