发明授权
US07473904B2 Device for monitoring ionizing radiation in silicon-on insulator integrated circuits
有权
用于监控绝缘体上硅集成电路中的电离辐射的装置
- 专利标题： Device for monitoring ionizing radiation in silicon-on insulator integrated circuits
- 专利标题（中）： 用于监控绝缘体上硅集成电路中的电离辐射的装置
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申请号： US12028850申请日： 2008-02-11
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公开(公告)号： US07473904B2公开(公告)日： 2009-01-06
- 发明人: Wagdi William Abadeer , Ethan Harrison Cannon , Dennis Thomas Cox , William Robert Tonti
- 申请人： Wagdi William Abadeer , Ethan Harrison Cannon , Dennis Thomas Cox , William Robert Tonti
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 Michael J. LeStrange
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A device and system for monitoring ionizing radiation. The device including: a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and a cathode of the diode coupled to a precharged node of a clocked logic circuit, an output state of the clocked logic circuit responsive a change in state of the precharged node, a state of the precharged node responsive to ionizing radiation induced charge collected by a depletion region of the diode and collected in the cathode.