发明授权
- 专利标题: Substrate processing apparatus and substrate processing method
- 专利标题(中): 基板加工装置及基板处理方法
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申请号: US10695826申请日: 2003-10-30
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公开(公告)号: US07476290B2公开(公告)日: 2009-01-13
- 发明人: Takayuki Saito , Tsukuru Suzuki , Kaoru Yamada , Kenya Ito , Masayuki Kamezawa , Kenji Yamaguchi
- 申请人: Takayuki Saito , Tsukuru Suzuki , Kaoru Yamada , Kenya Ito , Masayuki Kamezawa , Kenji Yamaguchi
- 申请人地址: JP Tokyo
- 专利权人: Ebara Corporation
- 当前专利权人: Ebara Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 主分类号: B08B7/04
- IPC分类号: B08B7/04
摘要:
The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a processing liquid supply unit for supplying a processing liquid onto a peripheral portion of the substrate which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a cleaning liquid supply unit having a cleaning liquid outlet which is oriented from a center of the substrate toward a peripheral portion of the substrate with an elevation angle of not more than 45° from a surface of the substrate. The cleaning liquid supply unit supplies a cleaning liquid to the surface of the substrate at a flow velocity of not less than 0.1 m/s.
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