发明授权
- 专利标题： Flash memory devices and methods of fabricating the same
- 专利标题（中）： 闪存器件及其制造方法
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申请号： US11358897申请日： 2006-02-21
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公开(公告)号： US07476928B2公开(公告)日： 2009-01-13
- 发明人: Dong-Chan Kim
- 申请人： Dong-Chan Kim
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2005-0028116 20050404
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A flash memory device includes a common source region that is disposed in an active region at a side of a ground-selection gate line, being apart from the ground-selection gate line. A pair of source spacers crosses over both top edges of the common source region. A source line fills up a space between the pair of source spacers. The top surface of the source line is equal to or lower than the that of the ground-selection gate line.
公开/授权文献
- US20060231822A1 Flash memory devices and methods of fabricating the same 公开/授权日：2006-10-19
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