发明授权
- 专利标题: Memory elements and methods of using the same
- 专利标题(中): 内存元素和使用方法
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申请号: US11353493申请日: 2006-02-14
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公开(公告)号: US07477541B2公开(公告)日: 2009-01-13
- 发明人: Wagdi W. Abadeer , Anthony R. Bonaccio , Jack A. Mandelman , William R. Tonti , Sebastian T. Ventrone
- 申请人: Wagdi W. Abadeer , Anthony R. Bonaccio , Jack A. Mandelman , William R. Tonti , Sebastian T. Ventrone
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Roy W. Truelson
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of about 3.9 to about 25; and (2) control logic coupled to at least one of the one or more MOSFETs. The control logic is adapted to (a) cause the memory element to operate in a first mode to store data; and (b) cause the memory element to operate in a second mode to change a threshold voltage of at least one of the one or more MOSFETs from an original threshold voltage to a changed threshold voltage such that the changed threshold voltage affects data stored by the memory element when operated in the first mode. Numerous other aspects are provided.
公开/授权文献
- US20070189076A1 Memory elements and methods of using the same 公开/授权日:2007-08-16