发明授权
US07479039B2 Manufacturing process for a super-digital (SD) flash card with slanted asymmetric circuit board
失效
具有倾斜不对称电路板的超级数字(SD)闪存卡的制造工艺
- 专利标题: Manufacturing process for a super-digital (SD) flash card with slanted asymmetric circuit board
- 专利标题(中): 具有倾斜不对称电路板的超级数字(SD)闪存卡的制造工艺
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申请号: US11846733申请日: 2007-08-29
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公开(公告)号: US07479039B2公开(公告)日: 2009-01-20
- 发明人: Jim Chin-Nan Ni , Abraham C. Ma , Paul Hsueh , Ming-Shiang Shen
- 申请人: Jim Chin-Nan Ni , Abraham C. Ma , Paul Hsueh , Ming-Shiang Shen
- 申请人地址: US CA San Jose
- 专利权人: Super Talent Electronics, Inc.
- 当前专利权人: Super Talent Electronics, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: gPatent LLC
- 代理商 Stuart T. Auvinen
- 主分类号: H01R13/66
- IPC分类号: H01R13/66
摘要:
A flash-memory device has a printed-circuit board assembly (PCBA) with a PCB with a flash-memory chip and a controller chip. The controller chip includes an external Secure-Digital (SD) interface, and a processing unit to read blocks of data from the flash-memory chip. The PCBA is encased inside an upper case and a lower case, with SD contact pads on the PCB that fit through contact openings in the upper case. Dividers between openings in the upper case that expose the SD contact pads also support the PCB at a slanted angle to the centerline of the device. The PCB slants upward at the far end to allow more thickness for the chips mounted to the bottom surface of the PCB, and slants downward at the insertion end to position the SD contact pads near the centerline. A metal switch-bar or an over-molded controller die may be substituted.
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