Invention Grant
US07482176B2 Etch mask and method of forming a magnetic random access memory structure
有权
蚀刻掩模和形成磁性随机存取存储器结构的方法
- Patent Title: Etch mask and method of forming a magnetic random access memory structure
- Patent Title (中): 蚀刻掩模和形成磁性随机存取存储器结构的方法
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Application No.: US11705211Application Date: 2007-02-12
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Publication No.: US07482176B2Publication Date: 2009-01-27
- Inventor: Donald L. Yates , Karen T Signorini
- Applicant: Donald L. Yates , Karen T Signorini
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second mask layer are etchable by the same etching process. The first and second mask layer are etched. Etch residue is removed from the first and second mask layers. The first mask layer is then selectively removed and the second mask layer remains.
Public/Granted literature
- US20070141844A1 Etch mask and method of forming a magnetic random access memory structure Public/Granted day:2007-06-21
Information query
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