发明授权
US07483462B2 Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
失效
在GaAsN势垒层和InGaAsN量子阱中使用Sb的长波长VCSEL有源区
- 专利标题： Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
- 专利标题（中）： 在GaAsN势垒层和InGaAsN量子阱中使用Sb的长波长VCSEL有源区
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申请号： US10836176申请日： 2004-04-30
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公开(公告)号： US07483462B2公开(公告)日： 2009-01-27
- 发明人: Ralph H. Johnson
- 申请人： Ralph H. Johnson
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Workman Nydegger
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
Disclosed is a structure for an active region of a GaAs based VCSEL with strong optical output substantially within the range of 1.3 μm and potentially for the 1.5 um range, making it well suited for the transmissivity of silica core fiberoptics. The active region of the VCSEL incorporates antimony in the quantum wells and portions of the barriers. The presence of Sb substantially smooths the surface of the barriers and quantum wells during the process of beam epitaxy, causing a higher critical thickness of each of the layers, thereby enabling fabrication with significantly reduced defects.