发明授权
- 专利标题： Method for producing semiconductor elements
- 专利标题（中）： 半导体元件的制造方法
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申请号： US11166768申请日： 2005-06-24
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公开(公告)号： US07485550B2公开(公告)日： 2009-02-03
- 发明人: Anton Mauder , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人： Anton Mauder , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Maginot, Moore & Beck
- 优先权： DE102004030573 20040624
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.
公开/授权文献
- US20060030126A1 Method for producing semiconductor elements 公开/授权日：2006-02-09
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