发明授权
- 专利标题： Hardmask for improved reliability of silicon based dielectrics
- 专利标题（中）： 用于改善硅基电介质的可靠性的硬掩模
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申请号： US12016594申请日： 2008-01-18
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公开(公告)号： US07485582B2公开(公告)日： 2009-02-03
- 发明人: Son Van Nguyen , Michael Lane , Stephen M. Gates , Xiao H. Liu , Vincent J. McGahay , Sanjay C. Mehta , Thomas M. Shaw
- 申请人： Son Van Nguyen , Michael Lane , Stephen M. Gates , Xiao H. Liu , Vincent J. McGahay , Sanjay C. Mehta , Thomas M. Shaw
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
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