发明授权
US07485585B2 Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same
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薄膜的形成方法，使用该薄膜的栅极结构的制造方法以及使用该薄膜的电容器的制造方法
- 专利标题： Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same
- 专利标题（中）： 薄膜的形成方法，使用该薄膜的栅极结构的制造方法以及使用该薄膜的电容器的制造方法
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申请号： US11372117申请日： 2006-03-10
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公开(公告)号： US07485585B2公开(公告)日： 2009-02-03
- 发明人: Young-Geun Park , Jae-Hyun Yeo , Eun-Ae Chung , Ki-Vin Im , Young-Sun Kim , Sung-Tae Kim , Cha-Young Yoo
- 申请人： Young-Geun Park , Jae-Hyun Yeo , Eun-Ae Chung , Ki-Vin Im , Young-Sun Kim , Sung-Tae Kim , Cha-Young Yoo
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0020358 20050311
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L23/58
摘要：
In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.
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