发明授权
US07485910B2 Simplified vertical array device DRAM/eDRAM integration: method and structure
有权
简化垂直阵列器件DRAM / eDRAM集成：方法和结构
- 专利标题： Simplified vertical array device DRAM/eDRAM integration: method and structure
- 专利标题（中）： 简化垂直阵列器件DRAM / eDRAM集成：方法和结构
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申请号： US10907630申请日： 2005-04-08
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公开(公告)号： US07485910B2公开(公告)日： 2009-02-03
- 发明人: Deok-kee Kim , Ramachandra Divakaruni , Carl J. Radens , Dae-Gyu Park
- 申请人： Deok-kee Kim , Ramachandra Divakaruni , Carl J. Radens , Dae-Gyu Park
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Lisa U. Jaklitsch, Esq.
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
The present invention provides a semiconductor structure that includes an active wordline located above a semiconductor memory device and a passive wordline located adjacent to said active wordline and above an active area of a substrate. In accordance with the present invention, the passive wordline is separated from the active area by a pad nitride. The present invention also provides methods that are capable of forming the inventive semiconductor structure.
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