发明授权
US07486557B2 Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
有权
用于使用重叠位线设置和字线使能间隔编程闪存设备的方法/电路
- 专利标题： Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
- 专利标题（中）： 用于使用重叠位线设置和字线使能间隔编程闪存设备的方法/电路
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申请号： US11480236申请日： 2006-06-30
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公开(公告)号： US07486557B2公开(公告)日： 2009-02-03
- 发明人: Jin-Kook Kim , Jin-Yub Lee
- 申请人： Jin-Kook Kim , Jin-Yub Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： JP10-2005-0067476 20050725
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method of programming a flash memory device includes charging selection lines with a first voltage while applying program data to bit lines to during a bit line setup interval, then activating a block word line to electrically connect the selection lines to corresponding word lines, and then applying a second voltage, greater than the first voltage, to a selected one of the selection lines. Related devices are also disclosed.
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