Invention Grant
US07486557B2 Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
有权
用于使用重叠位线设置和字线使能间隔编程闪存设备的方法/电路
- Patent Title: Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
- Patent Title (中): 用于使用重叠位线设置和字线使能间隔编程闪存设备的方法/电路
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Application No.: US11480236Application Date: 2006-06-30
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Publication No.: US07486557B2Publication Date: 2009-02-03
- Inventor: Jin-Kook Kim , Jin-Yub Lee
- Applicant: Jin-Kook Kim , Jin-Yub Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: JP10-2005-0067476 20050725
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of programming a flash memory device includes charging selection lines with a first voltage while applying program data to bit lines to during a bit line setup interval, then activating a block word line to electrically connect the selection lines to corresponding word lines, and then applying a second voltage, greater than the first voltage, to a selected one of the selection lines. Related devices are also disclosed.
Public/Granted literature
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