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US07491644B2 Manufacturing process for a transistor made of thin layers 有权
由薄层制成的晶体管的制造工艺

Manufacturing process for a transistor made of thin layers
Abstract:
A process for fabricating a transistor that includes a gate located in the immediate proximity of a dielectric includes a step of etching a layer of gate material. The gate etching step includes plasma etching of the gate layer over the major portion of its thickness so as to laterally define the gate and chemical etching of a residual portion of the gate layer so as to define the gate as far as the dielectric.
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