发明授权
- 专利标题： Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
- 专利标题（中）： 光电转换装置及其制造方法以及半导体装置
-
申请号： US11276036申请日： 2006-02-10
-
公开(公告)号： US07492028B2公开(公告)日： 2009-02-17
- 发明人: Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
- 申请人： Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
- 申请人地址： JP Atsugi-Shi, Kanagawa-Ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-Shi, Kanagawa-Ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2005-042926 20050218; JP2005-121392 20050419
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
公开/授权文献
信息查询
IPC分类:
