发明授权
US07492635B2 NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
有权
NOR型混合多位非易失性存储器件及其操作方法
- 专利标题： NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
- 专利标题（中）： NOR型混合多位非易失性存储器件及其操作方法
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申请号： US11371941申请日： 2006-03-10
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公开(公告)号： US07492635B2公开(公告)日： 2009-02-17
- 发明人: Won-joo Kim , Yoon-dong Park
- 申请人： Won-joo Kim , Yoon-dong Park
- 申请人地址： KR Cyeemggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Cyeemggi-do
- 代理机构： Harness Dickey & Pierce
- 优先权： KR10-2005-0001141 20050106; KR10-2005-0020798 20050312
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C11/00 ; G11C16/04
摘要：
A hybrid multi-bit memory device may include a plurality of unit cells arranged in a matrix of a plurality of rows and columns. Each of the unit cells may include a first memory unit and a second memory unit. The first and second memory unit may share a source and a drain. The first memory unit of each unit cell arranged in each row may be connected to one of a plurality of word lines, and the drain of each unit cell arranged in each column may be connected to one of a plurality of bit lines.
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