发明授权
- 专利标题： Method for forming reinforced interconnects on a substrate
- 专利标题（中）： 在基板上形成加强互连的方法
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申请号： US11370387申请日： 2006-03-06
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公开(公告)号： US07494924B2公开(公告)日： 2009-02-24
- 发明人: Hei Ming Shiu , On Lok Chau , Gor Amie Lai , Heng Keong Yip , Thoon Khin Chang , Lan Chu Tan
- 申请人： Hei Ming Shiu , On Lok Chau , Gor Amie Lai , Heng Keong Yip , Thoon Khin Chang , Lan Chu Tan
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Charles Bergere
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for forming reinforced interconnects or bumps on a substrate includes first forming a support structure on the substrate. A substantially filled capsule is then formed around the support structure to form an interconnect. The interconnect can reach a height of up to 300 microns.
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