Invention Grant
US07495274B2 Method and apparatus for controlling charge transfer in CMOS sensors with a graded transfer-gate work-function
有权
用于控制CMOS传感器中电荷转移的方法和装置，具有渐变传输门功能
- Patent Title: Method and apparatus for controlling charge transfer in CMOS sensors with a graded transfer-gate work-function
- Patent Title (中): 用于控制CMOS传感器中电荷转移的方法和装置，具有渐变传输门功能
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Application No.: US11026278Application Date: 2004-12-30
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Publication No.: US07495274B2Publication Date: 2009-02-24
- Inventor: Zeynep Toros , Richard Mann , Selim Bencuya
- Applicant: Zeynep Toros , Richard Mann , Selim Bencuya
- Applicant Address: US CA Fremont
- Assignee: ESS Technology, Inc.
- Current Assignee: ESS Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
Public/Granted literature
Information query
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