Provided are a system and method of determining pulse properties of a semiconductor device. An embodiment of the system includes at least one pair of first and second probes electrically contacting terminals of the semiconductor resistance device, a pulse generator connected to the first probe and outputting pulse signals, an oscilloscope having at least one pair of first and second channels, wherein the pulse electric signal is supplied to the first channel and the first probe and the second channel is connected to the second probe. The oscilloscope calculates a pulse current flowing in terminals of the semiconductor resistance device using the second channel and determines a dynamic resistance of the semiconductor resistance device using the first and second channels.