发明授权
- 专利标题: Method of monitoring a semiconductor manufacturing trend
- 专利标题(中): 监控半导体制造趋势的方法
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申请号: US11345154申请日: 2006-02-01
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公开(公告)号: US07496478B2公开(公告)日: 2009-02-24
- 发明人: Dieter Rathei
- 申请人: Dieter Rathei
- 申请人地址: AT Graz
- 专利权人: Dieter Rathei
- 当前专利权人: Dieter Rathei
- 当前专利权人地址: AT Graz
- 代理机构: The Nath Law Group
- 代理商 Barry Dove; Stanley N. Protigal
- 主分类号: G06F19/00
- IPC分类号: G06F19/00 ; G06F17/40 ; G05B99/00
摘要:
A parametric parameter is selected, which has an upper specification limit and a lower specification limit. A storage percentile is determined. The storage percentile is equal to a product yield percentage if the number of the set of measurements greater than the upper specification limit exceeds the number of the set of measurements lower than the lower specification limit, and is equal to the product yield percentage subtracted from one hundred percent if the number of the set of measurements less than the lower specification limit exceeds the number of the set of measurements greater than the upper specification limit. A number of spatial regions on the wafer is designated. A first group of measurements from the set of measurements is obtained for a first spatial region of the spatial regions. A measurement closest to the storage percentile is stored.
公开/授权文献
- US20070013399A1 Method of monitoring a semiconductor manufacturing trend 公开/授权日:2007-01-18
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