发明授权
- 专利标题: Methods for manufacturing porous dielectric substrates including patterned electrodes
- 专利标题(中): 制造包括图案化电极的多孔电介质基片的方法
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申请号: US11285067申请日: 2005-11-23
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公开(公告)号: US07498076B2公开(公告)日: 2009-03-03
- 发明人: Masakatsu Maruyama , Yoshito Fukumoto , Chitaka Manabe
- 申请人: Masakatsu Maruyama , Yoshito Fukumoto , Chitaka Manabe
- 申请人地址: JP Hyogo
- 专利权人: Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人: Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人地址: JP Hyogo
- 代理机构: Reed Smith LLP
- 代理商 Juan Carlos A. Marquez, Esq.
- 优先权: JP2005-000480 20050105
- 主分类号: B32B3/26
- IPC分类号: B32B3/26 ; H01L21/44 ; H01L21/84 ; H05K3/20
摘要:
A method for manufacturing a porous dielectric substrate including patterned electrodes includes a patterned electrode-forming step of preparing a support plate having a releasable flat face and then forming the patterned electrodes on the flat face, a porous dielectric substrate-forming step of feeding a material for forming the porous dielectric substrate onto the flat face having the patterned electrodes arranged thereon to form the porous dielectric substrate in which the patterned electrodes are embedded, and a separation step of separating the support plate from the porous dielectric substrate having the patterned electrodes embedded therein. In the patterned electrode-forming step, the patterned electrodes formed on the flat face are processed to have rough surfaces in the patterned electrode-forming step. Alternatively, after the flat face is coated with a releasing agent, the patterned electrodes are formed on the resulting flat face.
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